Author:
Chumak M.Ye.,Lytovchenko P.G.,Petrenko I.V.,Stratilat D.P.,Tartachnyk V.P.
Abstract
Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)