Effect of the RF bias on the plasma density in an argon inductively coupled plasma-Reference-Cited by-同舟云学术

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Effect of the RF bias on the plasma density in an argon inductively coupled plasma

Published:2020-09 Issue:9 Volume:27 Page:093508
ISSN:1070-664X
Container-title:Physics of Plasmas
language:en
Short-container-title:Physics of Plasmas

Author:

Lee Ho-won¹^ORCID,Kim Kyung-Hyun¹,Seo Jong In²,Chung Chin-Wook¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea

2. Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

AIP Publishing

Subject

Condensed Matter Physics

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015555

Reference26 articles.

1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching

2. Novel radio‐frequency induction plasma processing techniques

3. High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

4. Electron and negative ion densities in C2F6 and CHF3 containing inductively coupled discharges

5. The etching of silicon carbide in inductively coupled SF6/O2plasma

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1. Transition of Cu film to Cu2O film through oxygen plasma treatment;Materials Chemistry and Physics;2024-04

2. On the coupling effect in the RF-biased inductively coupled plasma with the synchronous control;Physics of Plasmas;2024-02-01

3. Ion energy distribution measurement device using a capillary plate with high-aspect ratio;Physics of Plasmas;2023-12-01

4. Formation of Diamond-Like Carbon Coatings by Chemical Deposition in High Density Plasma;Doklady BGUIR;2023-08-28

5. Improvement of photoresist etching by impedance control of a bias electrode in an inductive discharge;Plasma Sources Science and Technology;2023-07-01

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