High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124986
Reference6 articles.
1. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
2. Dry Etching of SiC for Advanced Device Applications
3. Icp Etching Of SiC
4. Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes
5. Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen
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