Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121937
Reference6 articles.
1. Residue‐Free Reactive Ion Etching of 3 C ‐ SiC and 6 H ‐ SiC in Fluorinated Mixture Plasmas
2. Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
3. Smooth etching of single crystal 6H‐SiC in an electron cyclotron resonance plasma reactor
4. Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma
5. Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide
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