Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy

Published:2017-10-18 Issue:11 Volume:214 Page:1700233
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kato Yukako¹^ORCID,Kawashima Hiroyuki¹²,Makino Toshiharu¹,Ogura Masahiko¹,Traoré Aboulaye¹,Ozawa Naoto¹²,Yamasaki Satoshi¹

Affiliation:

1. Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology (AIST); 1-1-1, Umezono, Tsukuba Ibaraki 305-8568 Japan

2. Graduate School of Pure and Applied Sciences University of Tsukuba; 1-1-1 Tennodai, Tsukuba Ibaraki 305-8577 Japan

Funder

Cross-ministerial Strategic Innovation Promotion Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Leakage current analysis of diamond Schottky barrier diodes operated at high temperature

2. Dynamic properties of diamond high voltage p–i–n diodes

3. High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

4. Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes

5. Depth and thermal stability of dry etch damage in GaN Schottky diodes

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