Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma-Reference-Cited by-同舟云学术

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Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

Published:2016-09 Issue:9 Volume:122 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Shen Lanlan,Song Sannian,Song Zhitang,Li Le,Guo Tianqi,Cheng Yan,Lv Shilong,Wu Liangcai,Liu Bo,Feng Songlin

Funder

"Strategic Priority Research Program" of the Chinese Academy of Sciences

National Integrate Circuit Research Program of China

National Natural Science Foundation of China

Science and Technology Council of Shanghai

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-016-0381-4.pdf

Reference27 articles.

1. M. Wuttig, Phase-change materials—towards a universal memory? Nat. Mater. 4, 265–266 (2005)

2. M. Wuttig, N. Yamada, Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824–832 (2007)

3. S. Raoux, W. Welnic, D. Ielmini, Phase change materials and their application to nonvolatile memories. Chem. Rev. 110, 240–267 (2010)

4. G. Atwood, Engineering—phase-change materials for systems. electronic memories. Science 321, 210–211 (2008)

5. R.E. Simpson et al., Toward the ultimate limit of phase change in Ge2Sb2Te5. Nano Lett. 10, 414–419 (2010)

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