Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System-Reference-Cited by-同舟云学术

Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System

Published:1996-05-01 Issue:5 Volume:143 Page:1750-1753
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Casady J. B.¹,Luckowski E. D.¹,Bozack M.¹,Sheridan D.¹,Johnson R. W.¹,Williams J. R.¹

Affiliation:

1. NASA Center for Commercial Development, Departments of Electrical Engineering and Physics, Auburn University, Auburn, Alabama 36849‐5201

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836711/pdf

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