Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs-Reference-Cited by-同舟云学术

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Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs

Published:2018-06-09 Issue:0 Volume:16 Page:257-261
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotech.

Author:

Oshima Masaharu¹²,Mori Daisuke³,Takigawa Aki³,Otsuki Akihiko³,Nagamura Naoka⁴,Konno Shun⁵,Takahashi Yoshinobu⁵,Kotsugi Masato⁵,Nohira Hiroshi²

Affiliation:

1. School of Engineering, The University of Tokyo

2. Tokyo City University

3. Fuji Electric Co.

4. NIMS

5. Tokyo University of Science

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/16/0/16_257/_pdf

Reference21 articles.

1. [1] J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, IEEE Trans. Electron Devices 49, 658 (2002). https://doi.org/10.1109/16.992876

2. [2] B. J. Baliga, Power Semiconductor Devices (PWS, Boston, MA, 1996) p. 335.

3. [3] H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara, IEEE Electron Device Lett. 20, 611 (1999). https://doi.org/10.1109/55.806101

4. [4] J. Senzaki, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki, and K. Fukuda, IEEE Electron Device Lett. 23, 13 (2002). https://doi.org/10.1109/55.974797

5. [5] H. Yano, H. Nakao, H. Mikami, T. Hatayama, Y. Uraoka, and T. Fuyuki, Appl. Phys. Lett. 90, 042102 (2007). https://doi.org/10.1063/1.2434157

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