Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen
Author:
Affiliation:
1. Intel Corporation, Santa Clara, California 95052‐8121
2. Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221‐0030
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.2086368/pdf
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