Icp Etching Of SiC

Abstract

AbstractA number of different plasma chemistries, including NF3/O2, SF6/O2 , SF6/Ar, ICI, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 Å·cm−1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4 ) are volatile. Photoresist masks have poor selectivity over SiC in F2 - based plasmas under normal conditions, and ITO or Ni are preferred.