Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534908
Reference29 articles.
1. Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma
2. Icp Etching Of SiC
3. Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes
4. Dry etching and induced damage
5. Comparison of dry etch chemistries for SiC
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