On the coupling effect in the RF-biased inductively coupled plasma with the synchronous control

Author:

He Yi1ORCID,Lu Manting1ORCID,Liu Xue1ORCID,Huang Jiamin1ORCID,Zhang Jiawei1ORCID,Ma Xiaoping1ORCID,Huang Lei1ORCID,Xu Liang1ORCID,Xin Yu1ORCID

Affiliation:

1. Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University , Suzhou 215006, People's Republic of China

Abstract

The coupling effects between the bias power and the inductive power in the RF-biased inductively coupled plasma with synchronous control are investigated by measuring electron energy distribution function using a compensated Langmuir probe. With synchronous control, the inductive power and the bias power are driven at an identical phase and frequency. The experimental results show that the inductive power lowers the self-bias voltage, while the bias power changes the plasma density by introducing extra power absorption and dissipation. The bias power also enhances the electron beam confinement, leading to an increase in electron density at a low pressure. Furthermore, in the E and H mode transition, with the bias power increasing, the hysteresis power reduces, and the electron density jump decreases.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

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