The etching of silicon carbide in inductively coupled SF6/O2plasma-Reference-Cited by-同舟云学术

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The etching of silicon carbide in inductively coupled SF6/O2plasma

Published:2003-02-14 Issue:5 Volume:36 Page:482-487
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Plank N O V,Blauw M A,Drift E W J M van der,Cheung R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/36/i=5/a=310/pdf

Reference15 articles.

1. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

2. Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

3. Fast, smooth, and anisotropic etching of SiC using SF[sub 6]/Ar

4. Effect of UV light irradiation on SiC dry etch rates

5. Etching of silicon carbide for device fabrication and through via-hole formation

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1. Effect of Helium Gas Addition to SF6/O2 Chemistry for SiC Dry Etching in AlGaN/GaN/SiC HEMTs;Springer Proceedings in Physics;2024

2. Enhanced light collection from solid-state qubits in silicon carbide through grayscale hard-mask lithography;Quantum 2.0 Conference and Exhibition;2024

3. Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography;Applied Physics Letters;2023-04-24

4. Diagnostics of Inductively Coupled Plasma Under the Influence of Immersed RF Self-Biased Substrate Electrode;IEEE Transactions on Plasma Science;2023

5. Numerical modeling of a hydrogenated silicon inductively coupled plasma discharge (SiH4/H2/Ar);Materials Today: Proceedings;2023

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