Role of step‐flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire‐like arrays
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103613
Reference18 articles.
1. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
2. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
3. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
4. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
5. Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy
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