Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference9 articles.
1. Proc. Intern. Symp. on the Foundations of Quantum Mechanics;Sakaki,1984
2. Optical characterization of interface disorder in multi-quantum well structures
3. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
4. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
5. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
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1. Photoreflectance characterization of GaAs/AlAs quantum wells with super-flat interfaces grown by molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2004-03
2. Light intensity imaging of single InAs quantum dots using scanning tunneling microscope;Applied Physics Letters;2003-05-12
3. Super-flat interfaces in pseudomorphic In[sub 0.72]Ga[sub 0.28]As/In[sub 0.52]Al[sub 0.48]As quantum wells grown on (411)A InP substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy;Microelectronics Journal;1999-04
5. High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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