Super-flat interfaces in pseudomorphic In[sub 0.72]Ga[sub 0.28]As/In[sub 0.52]Al[sub 0.48]As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy;physica status solidi (c);2008-07
2. Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor;Japanese Journal of Applied Physics;2007-04-24
3. Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE;Journal of Crystal Growth;2007-04
4. Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates;IEEE Transactions on Electron Devices;2006-11
5. Suppression of surface segregation of silicon dopants during molecular beam epitaxy of (411)A In[sub 0.75]Ga[sub 0.25]As∕In[sub 0.52]Al[sub 0.48]As pseudomorphic high electron mobility transistor structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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