Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor-Reference-Cited by-同舟云学术

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Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

Published:2007-04-24 Issue:4B Volume:46 Page:2325-2329
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanabe Issei,Shinohara Keisuke,Kitada Takahiro,Shimomura Satoshi,Endoh Akira,Yamashita Yoshimi,Mimura Takashi,Hiyamizu Satoshi,Matsui Toshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

2. InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance

3. Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces

4. Interface roughness characterization by electron mobility of pseudomorphic In[sub 0.74]Ga[sub 0.26]As∕In[sub 0.52]Al[sub 0.48]As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

5. Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

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1. Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs;physica status solidi (a);2023-07-28

2. Realization of Wurtzite GaSb Using InAs Nanowire Templates;Advanced Functional Materials;2018-05-21

3. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016

4. Molecular beam epitaxy;Molecular Beam Epitaxy;2013

5. Molecular Beam Epitaxy: An Overview;Comprehensive Semiconductor Science and Technology;2011

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