Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95788
Reference12 articles.
1. Defects in epitaxial multilayers
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5. GaAs/AlAs layered films
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1. Highly strained quantum structures grown on GaAs (001) vicinal substrate by MOCVD;Journal of Crystal Growth;2006-02
2. Self-Organization Phenomena at Crystal Surfaces;NanoScience and Technology;2004
3. Molecular Beam Epitaxy;Handbook of Thin Film Deposition Processes and Techniques;2001
4. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution;Applied Physics Letters;1999-07-05
5. Electronic structure, impurity binding energies, absorption spectra of InAs/GaAs quantum dots;Physica B: Condensed Matter;1998-10
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