Electronic structure, impurity binding energies, absorption spectra of InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
3. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
5. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
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3. The nonlinear optical properties of a magneto-exciton in a strained Ga 0.2 In 0.8 As/GaAs quantum dot;Chinese Physics B;2013-10
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