Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124284
Reference22 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
3. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields
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