Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation-Reference-Cited by-同舟云学术

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Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

Published:2012-08 Issue:1 Volume:353 Page:84-87
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jin Xiuguang,Nakahara Hirotaka,Saitoh Koh,Saka Takashi,Ujihara Toru,Tanaka Nobuo,Takeda Yoshikazu

Funder

Technology Development Program for Advanced Measurement and Analysis of the Japan Science and Technology Agency (JST)

Japan Society for the Promotion of Science (JSPS)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Highly Polarized Electron Source Using InGaAs–GaAs Strained-Layer Superlattice

2. Super-High Brightness and High-Spin-Polarization Photocathode

3. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs

4. Heteroepitaxial technologies of III–V on Si

5. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer;Optoelectronics Letters;2016-11

2. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer;Optoelectronics Letters;2016-05

3. Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate;Journal of Crystal Growth;2013-05

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