Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97212
Reference13 articles.
1. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
2. GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
3. Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy
4. Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
5. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
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