GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96178
Reference15 articles.
1. 1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
2. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
3. 1.3 μm InGaAsP DCPBH multiquantum-well lasers
4. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
5. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
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