[0001] composition modulations in Al0.4Ga0.6N layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2953451
Reference17 articles.
1. A. Zunger and S. Mahajan, Handbook on Semiconductors, edited by S. Mahajan, (Elsevier Science, Amsterdam, 1994), Vol. 3, p. 1399.
2. Solid phase immiscibility in GaInN
3. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
4. Phase separation in InGaN grown by metalorganic chemical vapor deposition
5. Phase separation suppression in InGaN epitaxial layers due to biaxial strain
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1. Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux;physica status solidi (a);2022-01-27
2. Modulated Nanostructure Characterization Using Aberration Corrected STEM;Microscopy and Microanalysis;2020-07-30
3. Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers;Journal of Crystal Growth;2019-02
4. Detailed carrier recombination in lateral composition modulation structure;Applied Physics Express;2018-08-03
5. AlGaN nanostructures with extremely high quantum yield at 300 K;Physics of the Solid State;2016-11
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