Phase separation suppression in InGaN epitaxial layers due to biaxial strain-Reference-Cited by-同舟云学术

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Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Published:2002-02-04 Issue:5 Volume:80 Page:769-771
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tabata A.,Teles L. K.,Scolfaro L. M. R.,Leite J. R.,Kharchenko A.,Frey T.,As D. J.,Schikora D.,Lischka K.,Furthmüller J.,Bechstedt F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1436270

Reference10 articles.

1. Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes

2. Luminescences from localized states in InGaN epilayers

3. Luminescences from localized states in InGaN epilayers

4. Origin of Luminescence from InGaN Diodes

5. Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering

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