Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816090
Reference42 articles.
1. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
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3. Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks
4. Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface
5. Oxygen defect accumulation at Si:HfO2 interfaces
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