Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices-Reference-Cited by-同舟云学术

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Published:2013-07-21 Issue:3 Volume:114 Page:034505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pandey R. K.,Sathiyanarayanan Rajesh,Kwon Unoh,Narayanan Vijay,Murali K. V. R. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4816090

Reference42 articles.

1. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

2. High dielectric constant gate oxides for metal oxide Si transistors

3. Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

4. Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface

5. Oxygen defect accumulation at Si:HfO2 interfaces

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