Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2259792
Reference35 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. High k Gate Dielectrics
3. The oxide gate dielectric: do we know all we should?
4. High-k gate stacks for planar, scaled CMOS integrated circuits
5. High-κ gate dielectrics: Current status and materials properties considerations
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