Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation
Author:
Affiliation:
1. The College of Energy and Electrical Engineering, Hohai University, No. 8, Focheng Road, Nanjing 211100, China
2. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048080
Reference45 articles.
1. γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device
2. Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors
3. Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS
4. Co-60 gamma irradiation effects on electrical characteristics of HfO 2 MOSFETs and specification of basic radiation- induced degradation mechanism
5. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications
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