Radiation tolerance and defect dynamics of ALD-grown HfTiO<i><sub>x</sub></i>-based MOS capacitors-Reference-Cited by-同舟云学术

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Radiation tolerance and defect dynamics of ALD-grown HfTiO_x-based MOS capacitors

Published:2023-01-02 Issue:1-2 Volume:178 Page:83-93
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Sai Prasad Goud R.¹,Akkanaboina Mangababu²,Anjum Arshiya³,Ravi Kumar K.²,Gnana Prakash A. P.³,Nageswara Rao S.V.S.¹²,Pathak A. P.²

Affiliation:

1. Centre for Advanced Studies in Electronics Science and Technology (CASEST), University of Hyderabad, Hyderabad, India

2. School of Physics, University of Hyderabad, Hyderabad, India

3. Department of Studies in Physics, University of Mysore, Mysuru, India

Funder

University of Hyderabad

National Academy of Sciences

NASI

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2023.2186872

Reference64 articles.

1. Advancement of Gate Oxides from SiO₂ to High-k Dielectrics in Microprocessor and Memory

2. Replacing SiO2 - Material and Processing Aspects of New Dielectrics

3. Citation Impact of Outstanding Conference Papers of the IEEE Nuclear and Space Radiation Effects Conference

4. Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

2. Electric field effect on $$\mathrm {Hf_{x} Ti_{y} O_{2(x+y)}}$$ clusters for applications in MOSFETs and DSSCs: a DFT study;Journal of Molecular Modeling;2023-11-15

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