Thermal phase separation of ZrSiO4thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors
Author:
Funder
Abant Izzet Baysal Üniversitesi
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aabb68/pdf
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3. Physical and Electrical Characterization of ZrO[sub 2] Gate Insulators Deposited on Si(100) Using Zr(O[sup i]-Pr)[sub 2](thd)[sub 2] and O[sub 2]
4. A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors
5. The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors
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