The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors-Reference-Cited by-同舟云学术

The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors

Published:2017-05 Issue: Volume:258 Page:44-48
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Abubakar Saleh,Kaya Senol,Karacali Huseyin,Yilmaz Ercan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode;Park;J. Korean. Phys. Soc.,2006

2. Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon;Mahajan;Semiconductors+,2014

3. Oxidation of sputtered Zr thin film on Si substrate;Kurniawan;J. Mater. Sci. Mater. El.,2011

4. Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors;Sekhar;Surf. Interface Anal.,2014

5. Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors;Bartic;Org. Electron.,2002

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quartz Tuning Fork Sensor-Based Dosimetry for Sensitive Detection of Gamma Radiation;Materials;2021-11-19

2. Dispersion of thulium-yttria nanoparticles to build up smart structures;Materials Today Communications;2021-03

3. Effects of series resistance and interface state on electrical properties of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors;Microelectronic Engineering;2020-08

4. Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3);Radiation Physics and Chemistry;2020-06

5. Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices;Journal of Materials Science;2020-03-28