The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device-Reference-Cited by-同舟云学术

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The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device

Published:2020-12 Issue: Volume:177 Page:109135
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Kahraman Aysegul,Gurer Umutcan,Yilmaz Ercan

Funder

Scientific and Technological Research Council of Turkey

Scientific and Technological Research Projects Support Program

Presidency of Strategy and Budget of the Presidency of Republic of Turkey

Publisher

Elsevier BV

Subject

Radiation

Reference28 articles.

1. X-ray photoelectron spectroscopy study of the reduction and oxidation of uranium and cerium single oxide compared to (U-Ce) mixed oxide films;Eloirdi;Appl. Surf. Sci.,2018

2. Effects of gamma irradiation on electrical parameters of metal-insulator-semiconductor structure with silicon nitride interfacial insulator layer;Ertugrul;Radiat. Eff. Defect Solid,2014

3. Total-dose radiation response of Hafnium-silicate capacitors;Felix;IEEE Trans. Nucl. Sci.,2002

4. Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters;Guo;Ceram. Int.,2017

5. Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment;Hao;Appl. Surf. Sci.,2020

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1. Substrate heat-assisted spray pyrolysis of crack-free ytterbium sesquioxide-Si heterojunction diodes for photo-sensing applications;Surfaces and Interfaces;2023-07

2. The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure;Journal of Materials Science: Materials in Electronics;2023-06

3. Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics;Radiation Physics and Chemistry;2022-07

4. Effective Enrichment of Low-Concentration Rare-Earth Ions by Three-Dimensional Thiostannate K2Sn2S5;ACS Applied Materials & Interfaces;2021-11-10

5. High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications;ACS Applied Materials & Interfaces;2021-10-12

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