Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50Gy with 60Co
Author:
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
Elsevier BV
Subject
Radiation
Reference31 articles.
1. Direct and pulsed current annealing of p-MOSFET based dosimeter, the MOSkin;Alshaikh;Australas. Phys. Eng. Sci. Med.,2014
2. A new radiotherapy surface detector. The MOSFET;Butson;Med. Phys.,1996
3. Zero temperature coefficient bias in MOS devices dependence on interface traps density, Application to MOS dosimetry;Corbonelto;IEEE Trans. Nucl. Sci.,2011
4. Extension of measurement range of MOS dosimeters using radiation induced charge neutralization;Faigon;IEEE Trans. Nucl. Sci.,2008
5. Oxygen vacancy model for the E′γ center in SiO2;Feigl;Solid State Commun.,1974
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor;Scientific Reports;2024-04-01
2. Application of Commercial p-channel Power VDMOS Transistors as Dosimeters for Photon Ionizing Radiation;2023 58th International Scientific Conference on Information, Communication and Energy Systems and Technologies (ICEST);2023-06-29
3. P-channel MOSFET as ionizing radiation detector;Applied Radiation and Isotopes;2023-06
4. Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity;Radiation Effects and Defects in Solids;2022-10-18
5. Characterization of Commercial P-MOSFETs for Using as a Gamma-Rays Dosimeter;Silicon;2021-02-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3