Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2763962
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1. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
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3. Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
4. Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices
5. Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices
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