Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1935768
Reference17 articles.
1. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
2. Effect of Hf metal predeposition on the properties of sputtered HfO2/Hf stacked gate dielectrics
3. The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode
4. Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode
5. Application of HfSiON as a gate dielectric material
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric;ECS Journal of Solid State Science and Technology;2021-12-01
2. Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells;IEEE Electron Device Letters;2019-05
3. Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer;ECS Journal of Solid State Science and Technology;2015-12-23
4. Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping;Applied Physics Letters;2013-01-14
5. Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations;Electrochemical and Solid-State Letters;2011
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3