Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices-Reference-Cited by-同舟云学术

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Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

Published:2006-03 Issue:3 Volume:27 Page:148-150
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chin-Lung Cheng ,Kuei-Shu Chang-Liao ,Tzu-Chen Wang ,Tien-Ko Wang ,Howard Chih-Hao Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/33635/01599462.pdf?arnumber=1599462

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and physical characteristics of HfLaON-gated metal–oxide-semiconductor capacitors with various nitrogen concentration profiles;Microelectronic Engineering;2011-02

2. Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations;Electrochemical and Solid-State Letters;2011

3. Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics;Solid-State Electronics;2010-10

4. Composition Effects of $\hbox{Ti}_{x}\hbox{Ta}_{y}$ Dual-Doped $\hbox{HfO}_{x}/\hbox{SiO}_{2}$ Stacked Dielectrics on Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor Capacitors;IEEE Transactions on Device and Materials Reliability;2010-03

5. Electrical Characteristics and Thermal Stability of $ \hbox{Hf}_{x}\hbox{Ta}_{y}\hbox{Si}_{z}\hbox{N}$ Metal Gate Electrode for Advanced MOS Devices;IEEE Transactions on Electron Devices;2008-11

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