Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics-Reference-Cited by-同舟云学术

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Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics

Published:2010-10 Issue:10 Volume:54 Page:1197-1203
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cheng Chin-Lung,Horng Jeng-Haur,Chang-Liao Kuei-Shu,Jeng Jin-Tsong,Tsai Hung-Yang

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

2. Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films

3. Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications

4. Temperature Effects on Breakdown Characteristics of High-$\kappa$ Gate Dielectrics With Metal Gates

5. Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature;Journal of Alloys and Compounds;2015-10

2. Complex impedance spectroscopy of high-k HfO2 thin films in Al/HfO2/Si capacitor for gate oxide applications;Journal of Materials Science: Materials in Electronics;2015-02-26

3. Effect of calcination temperature on phase transformation of HfO2 nanoparticles;AIP Conference Proceedings;2015

4. Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer;ACS Applied Materials & Interfaces;2014-12-15

5. Band offsets of metal–oxide–semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-03

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