Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices-Reference-Cited by-同舟云学术

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Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices

Published:2006-01 Issue:1 Volume:53 Page:63-70
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chin-Lung Cheng ,Chun-Yuan Lu ,Kuei-Shu Chang-Liao ,Ching-Hung Huang ,Sheng-Hung Wang ,Tien-Ko Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33151/01561547.pdf?arnumber=1561547

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics;Semiconductor Science and Technology;2019-12-23

2. Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H 2 and NH 3 plasma treated interfacial layers;Vacuum;2017-06

3. Temperature Dependence of the 1727 cm–1 Interstitial Oxygen Absorption Band Studied by Attenuated Total Internal Reflection Infrared Spectroscopy in a Newly Developed Microreactor;The Journal of Physical Chemistry C;2013-10-15

4. Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate;Journal of The Electrochemical Society;2012

5. Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations;Electrochemical and Solid-State Letters;2011

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