Funder
Ministry of Science and Technology of Taiwan, Republic of China (R.O.C.)
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference30 articles.
1. High performance Ge pMOS devices using a Si-compatible process flow;Zimmerman;IEDM Tech. Dig.,2006
2. Enhanced hole mobility and low Tinv for pMOSFET by a novel epitaxial Si/Ge superlattice channel;Fu;IEEE Electron Device Lett.,2012
3. Characteristics of strained germanium p-and n channel field effect transistors on Si (111) substrate;Maikap;Semicond. Sci. Technol.,2007
4. Li-Jung Liu, et al., “Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric,” VLSI technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on, Hsinchu, 2013, pp. 1–2.
5. Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices;Cheng;IEEE Trans. Electron Devices,2006
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献