Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2 O3 -SiO2 structure-Reference-Cited by-同舟云学术

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2 O3 -SiO2 structure

Published:2015-02-25 Issue:8 Volume:212 Page:1751-1755
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

El-Atab Nazek¹,Rizk Ayman¹,Tekcan Burak²,Alkis Sabri²,Okyay Ali K.²,Nayfeh Ammar¹

Affiliation:

1. Masdar Institute of Science and Technology; Abu Dhabi 54224 United Arab Emirates

2. Bilkent University; 06800 Ankara Turkey

Funder

Advanced Technology Investment Company

TUBITAK

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431802/fullpdf

Reference32 articles.

1. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

2. Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

3. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

4. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

5. Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs

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