Overview of charge trapping memory devices—charge trapping layer engineering-Reference-Cited by-同舟云学术

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Overview of charge trapping memory devices—charge trapping layer engineering

Published:2020 Issue: Volume: Page:45-66
ISSN:
Container-title:Nanomaterials-Based Charge Trapping Memory Devices
language:
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Author:

Nayfeh Ammar,El-Atab Nazek

Publisher

Elsevier

Reference32 articles.

1. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer;El-Atab;AIP Adv.,2013

2. Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2O3-SiO2 structure;El-Atab;Phys. Status Solidi A,2015

3. Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer;El-Atab;Appl. Phys. Lett.,2014

4. Non-volatile Si quantum memory with self-aligned doubly-stacked dots;Ohba;IEEE Trans. Elec. Dev.,2002

5. New nonvolatile memory with extremely high density metal nano-dots;Takata;IEDM Tech. Dig,2003

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