Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer-Reference-Cited by-同舟云学术

Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer

Published:2014-06-23 Issue:25 Volume:104 Page:253106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

El-Atab Nazek¹,Cimen Furkan²³,Alkis Sabri³⁴,Ortaç Bülend³⁴,Alevli Mustafa⁵,Dietz Nikolaus⁶,Okyay Ali K.²³⁴,Nayfeh Ammar¹

Affiliation:

1. Institute Center for Microsystems-iMicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emirates

2. Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey

3. UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey

4. Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

5. Department of Physics, Marmara University, 34722 Istanbul, Turkey

6. Department of Physics, Georgia State University, Atlanta, Georgia 30303, USA

Funder

ATIC

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference20 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Progress and prospects of group-III nitride semiconductors

3. When group-III nitrides go infrared: New properties and perspectives

4. Surface chemical modification of InN for sensor applications

5. Anion detection using ultrathin InN ion selective field effect transistors

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