Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98435
Reference13 articles.
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4. Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen
5. Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into Si
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