Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen-Reference-Cited by-同舟云学术

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Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen

Published:1985-05 Issue:1-3 Volume:71 Page:163-170
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Holland O.W.,Fathy D.,Narayan J.,Sjoreen T.P.,Wilson S.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

2. Epitaxial silicon layers grown on ion‐implanted silicon nitride layers

3. An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO2Layer Formed by Oxygen-Ion Implantation

4. Inst. Phys. Conf. Ser. No. 67;Fathy,1983

5. Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of structure and composition of buried oxide layers formed by oxygen-ion implantation into silicon;Radiation Effects and Defects in Solids;2009-01

2. Formation of metallic, crystalline NiSi2thin film on amorphous SiO2/Si;Journal of Applied Physics;1993-04-15

3. Metalization of Oriented Crystalline Films on Amorphous SiO2/Si;MRS Proceedings;1992

4. Effect of implantation current density and anneal time on the microstructure of SIMOX;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-05

5. Formation of multiply faulted defects in oxygen implanted silicon‐on‐insulator material;Journal of Applied Physics;1991-02

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