Epitaxial silicon layers grown on ion‐implanted silicon nitride layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654956
Reference10 articles.
1. Formation of SiO2Films by Oxygen-Ion Bombardment
2. Isolating surface layers on metallic conductors produced by ion bombardment
3. FORMATION OF SiC IN SILICON BY ION IMPLANTATION
4. LOCALIZED MODES AND DIVACANCY ABSORPTION IN OXYGEN ION IMPLANTED Si
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2. Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry;Journal of Applied Physics;2004-09-15
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