Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95022
Reference8 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation
3. The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation
4. Characterization of buried SiO2 layers formed by ion implantation of oxygen
5. Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
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1. Matrix-seeded growth of nitride semiconductor nanostructures using ion beams;Journal of Applied Physics;2005-03-15
2. The role of defect excesses in damage formation in Si during ion implantation at elevated temperature;Materials Science and Engineering: A;1998-09
3. Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates;Japanese Journal of Applied Physics;1998-02-15
4. Ion beams in silicon processing and characterization;Journal of Applied Physics;1997-05-15
5. Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulation;Journal of Electronic Materials;1996-01
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