Formation of buried insulating layers in silicon by the implantation of high doses of oxygen-Reference-Cited by-同舟云学术

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Formation of buried insulating layers in silicon by the implantation of high doses of oxygen

Published:1983-05 Issue: Volume:209-210 Page:157-164
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Hemment P.L.F.,Maydell-Ondrusz E.,Stephens K.G.,Butcher J.,Ioannou D.,Alderman J.

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Lattice defects in semiconductors;Brack,1974

2. Conf. on Microscopy of semiconductor materials;Das,1981

3. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

4. Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

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1. Surrey Ion Beam Centre: the EPSRC “MRF” for Ion Beam Applications;EPJ Web of Conferences;2016

2. Evolution and Future Trends of SIMOX Material;MRS Bulletin;1998-12

3. Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM;Japanese Journal of Applied Physics;1997-12-15

4. Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulation;Journal of Electronic Materials;1996-01

5. Range profiles in self-ion-implanted crystalline Si;Physical Review B;1995-12-01

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