Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM-Reference-Cited by-同舟云学术

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Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM

Published:1997-12-15 Issue:Part 1, No. 12A Volume:36 Page:7323-7328
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoneda Tomoaki,Kajiyama Kenji,Tohjou Fumiyo,Yoshioka Yoshiaki,Ikeda Atsushi,Kisaka Yoshiaki,Nishimura Tomoaki,Kido Yoshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal Expression of Projected Range Distributions for Spherical and Cylindrical Shape Target by Computer Simulation;Journal of the Vacuum Society of Japan;2017

2. Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations;Journal of Mass Spectrometry;2014-02-17

3. Depth Distributions of Phosphorus Implanted into SiO2 Analyzed by the Monte Carlo Simulation of Extended TRIM;Journal of the Vacuum Society of Japan;2009

4. High-Precision Analysis of Oxygen Depth Profile in [sup 16]O[sup +]-Implanted Silicon Substrates by Spectroscopic Ellipsometry;Journal of The Electrochemical Society;2004

5. Measured transverse straggling of MeV Sn and Sb ions implanted in SiO2 targets;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-10

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