The role of defect excesses in damage formation in Si during ion implantation at elevated temperature-Reference-Cited by-同舟云学术

The role of defect excesses in damage formation in Si during ion implantation at elevated temperature

Published:1998-09 Issue:1-2 Volume:253 Page:240-248
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Holland O.W.,Budai J.D.,Nielsen Bent

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. See for example: James F. Gibbons, Proceedings of the IEEE 60 (1972) 1062; G.F. Cerofolini, L. Meda, C. Volpones, J. Appl. Phys. 63 (1988) 4911; O.W. Holland, S.J. Pennycook, Gerald L. Albert, Appl. Phys. Lett. 55 (1989) 2503; O.W. Holland, C.W. White, Nucl. Inst. Meth. B59 (1991) 353 and references within.

2. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon

3. Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

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