Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation-Reference-Cited by-同舟云学术

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Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation

Published:1980-05 Issue:5 Volume:19 Page:1005-1006
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashi Takayoshi,Okamoto Hamao,Homma Yoshikazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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